- 您现在的位置：买卖IC网 > Sheet目录481 > MTP2955V (ON Semiconductor)MOSFET P-CH 60V 12A TO-220AB
MTP2955V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
V (BR)DSS
60
?
?
58
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I DSS
I GSS
?
?
?
?
?
?
10
100
100
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 6.0 Adc)
Drain ? to ? Source On ? Voltage
(V GS = 10 Vdc, I D = 12 Adc)
(V GS = 10 Vdc, I D = 6.0 Adc, T J = 150 ° C)
Forward Transconductance (V DS = 10 Vdc, I D = 6.0 Adc)
(Cpk ≥ 2.0) (Note 3)
(Cpk ≥ 1.5) (Note 3)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
3.0
2.8
5.0
0.185
?
?
5.0
4.0
?
0.230
2.9
2.5
?
Vdc
mV/ ° C
W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
550
700
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
200
50
280
100
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
15
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 12 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
50
24
39
100
50
80
Gate Charge
(V DS = 48 Vdc, I D = 12 Adc, V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
19
4.0
9.0
7.0
30
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 1)
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 12 Adc, V GS = 0 Vdc)
(I S = 12 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 12 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.8
1.5
115
90
25
0.53
3.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
C pk =
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Max limit ? Typ
3 x SIGMA
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MTP2P50E
MOSFET P-CH 500V 2A TO-220AB
MTP3055VL
MOSFET N-CH 60V 12A TO-220AB
MTP3055VL
MOSFET N-CH 60V 12A TO-220
MTP3055V
MOSFET N-CH 60V 12A TO-220AB
MTP36N06V
MOSFET N-CH 60V 32A TO-220AB
MTP50P03HDL
MOSFET P-CH 30V 50A TO-220AB
MTPD1346-010
PIN DIODE 1300NM FLAT 2.8MM TO46
MTPD1346-030
PIN DIODE 1300NM FLAT 2.8MM TO46
相关代理商/技术参数
MTP2955V_L86Z
功能描述:MOSFET DISC BY MFG 2/02
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTP29N15E
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 29 Amps, 150 Volts N-Channel TO-220
MTP2H-E10-C
功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP2H-E10-C39
功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP2H-E6-C
功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP2N20
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTP2N35
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 2.25A, 350-400V
MTP2N40
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 2.25A, 350-400V